vishay general semiconductor tpsmc6.8 thru tpsmc47a document number 88407 30-jun-06 www.vishay.com 1 surface mount automotive tran sient voltage suppressors high temperature st ability & high reli ability conditions features ? patented par ? construction ? available in unidirectional polarity only ? 1500 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? typical i d less than 1.0 a above 15 v rating ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214ab (smc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d he3 suffix for high re liability grade (aec q101 qualified) polarity: color band denotes cathode end * patent #'s 4,980,315 5 , 278 , 094 patented* 5,166,769 do-214ab (smc) major ratings and characteristics v (br) 6.8 v to 47 v p ppm 1500 w i fsm 200 a t j max. 185 c note: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) measured on 8.3 ms single half sine- wave, or equivalent square wave, dut y cycle = 4 pulses per minute maximum maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1,2) (fig. 3) p ppm minimum 1500 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a peak forward surge current 8.3 ms single half sine-wave (2) i fsm 200 a maximum instantaneous forward voltage at 100 a (2) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
www.vishay.com 2 document number 88407 30-jun-06 vishay general semiconductor tpsmc6.8 thru tpsmc47a note: (1) v (br) measured after i t applied for 300 s, i t = square wave pulse or equivalent (2) surge current waveform per fig. 3 and derated per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v (br) (1) at i t (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i r (a) t j = 150 c maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min max tpsmc6.8 ddp 6.12 7.48 10.0 5.50 1000 10000 139.0 10.8 tpsmc6.8a dep 6.45 7.14 10.0 5.80 1000 10000 143.0 10.5 tpsmc7.5 dfp 6.75 8.25 10.0 6.05 500 5000 128.0 11.7 tpsmc7.5a dgp 7.13 7.88 10.0 6.40 500 5000 133.0 11.3 tpsmc8.2 dhp 7.38 9.02 10.0 6.63 200 2000 120.0 12.5 tpsmc8.2a dkp 7.79 8.61 10.0 7.02 200 2000 124.0 12.1 tpsmc9.1 dlp 8.19 10.0 1.0 7.37 50 500 109.0 13.8 tpsmc9.1a dmp 8.65 9.55 1.0 7.78 50 500 112.0 13.4 tpsmc10 dnp 9.00 11.0 1.0 8.10 20 200 100.0 15.0 tpsmc10a dpp 9.50 10.5 1.0 8.55 20 200 103.0 14.5 tpsmc11 dqp 9.90 12.1 1.0 8.92 5.0 50 92.6 16.2 tpsmc11a drp 10.5 11.6 1.0 9.40 5.0 50 96.2 15.6 tpsmc12 dsp 10.8 13.2 1.0 9.72 2.0 10 86.7 17.3 tpsmc12a dtp 11.4 12.6 1.0 10.2 2.0 10 89.8 16.7 tpsmc13 dup 11.7 14.3 1.0 10.5 2.0 10 78.9 19.0 tpsmc13a dvp 12.4 13.7 1.0 11.1 2.0 10 82.4 18.2 tpsmc15 dwp 13.5 16.5 1.0 12.1 1.0 10 68.2 22.0 tpsmc15a dxp 14.3 15.8 1.0 12.8 1.0 10 70.8 21.2 tpsmc16 dyp 14.4 17.6 1.0 12.9 1.0 10 63.8 23.5 tpsmc16a dzp 15.2 16.8 1.0 13.6 1.0 10 66.7 22.5 tpsmc18 edp 16.2 19.8 1.0 14.5 1.0 10 56.6 26.5 tpsmc18a eep 17.1 18.9 1.0 15.3 1.0 10 59.5 25.2 tpsmc20 efp 18.0 22.0 1.0 16.2 1.0 10 51.5 29.1 tpsmc20a egp 19.0 21.0 1.0 17.1 1.0 10 54.2 27.7 tpsmc22 ehp 19.8 24.2 1.0 17.8 1.0 10 47.0 31.9 tpsmc22a ekp 20.9 23.1 1.0 18.8 1.0 10 49.0 30.6 tpsmc24 elp 21.6 26.4 1.0 19.4 1.0 10 43.2 34.7 tpsmc24a emp 22.8 25.2 1.0 20.5 1.0 10 45.2 33.2 tpsmc27 enp 24.3 29.7 1.0 21.8 1.0 10 38.4 39.1 tpsmc27a epp 25.7 28.4 1.0 23.1 1.0 10 40.0 37.5 tpsmc30 eqp 27.0 33.0 1.0 24.3 1.0 10 34.5 43.5 tpsmc30a erp 28.5 31.5 1.0 25.6 1.0 10 36.2 41.4 tpsmc33 esp 29.7 36.3 1.0 26.8 1.0 10 31.4 47.7 tpsmc33a etp 31.4 34.7 1.0 28.2 1.0 10 32.8 45.7 tpsmc36 eup 32.4 39.6 1.0 29.1 1.0 15 28.8 52.0 tpsmc36a evp 34.2 37.8 1.0 30.8 1.0 15 30.1 49.9 tpsmc39 ewp 35.1 42.9 1.0 31.6 1.0 15 26.6 56.4 tpmsc39a exp 37.1 41.0 1.0 33.3 1.0 15 27.8 53.9 tpsmc43 eyp 38.7 47.3 1.0 34.8 1.0 20 24.2 61.9 tpsmc43a ezp 40.9 45.2 1.0 36.8 1.0 20 25.3 59.3 tpsmc47 fdp 42.3 51.7 1.0 38.1 1.0 20 22.1 67.8 tpsmc47a fep 44.7 49.4 1.0 40.2 1.0 20 23.1 64.8
document number 88407 30-jun-06 www.vishay.com 3 tpsmc6.8 thru tpsmc47a vishay general semiconductor ratings and characteristics curves (t a = 25 c unless otherwise noted) ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode tpsmc6.8ahe3/57t 0.211 57t 850 7" diameter plastic tape & reel tpsmc6.8ahe3/9at 0.211 9at 3500 13" diameter plastic tape & reel figure 1. peak pulse power rating curve figure 2. pulse power or current versus initial junction temperature 0.1 1.0 10 100 0.31 x 0.31" ( 8 .0 x 8 .0 mm) copper pad areas 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms p ppm - peak po w er (k w ) td - p u lse w idth (s) t a = 25 c n on-repetiti v e p u lse w a v eform sho w n in fig. 3 0 25 50 75 100 0 50 100 150 200 peak p u lse p o w er (p pp ) or c u rrent (i pp ) derating in p ercentage ( %) t j - initial temperat u re (c) figure 3. pulse waveform figure 4. typical j unction capacitance 0 50 100 150 td 0 1.0 2.0 3.0 4.0 tr = 10 sec peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 sec w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (td) is defined as the point w here the peak c u rrent decays to 50 % of i ppm i ppm - peak p u lse c u rrent, % i rsm t - time (ms) 10 100 1000 10000 100 10 1 200 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p v r meas u red at zero bias v r meas u red at stand-off v oltage v w m c j , j u nction capacitance (pf) v (br) - breakdo w n v oltage ( v )
www.vishay.com 4 document number 88407 30-jun-06 vishay general semiconductor tpsmc6.8 thru tpsmc47a package outline dimensions in inches (millimeters) figure 5. maximum non-repetitive/peak forward surge current 200 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 10 50 50 10 1 100 5 t j = t j max. 8 .3 ms single half sine- w a v e 0.260 (6.60) 0.2 8 0 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0.305 (7.75) 0.320 ( 8 .13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc) 0.1 8 5 max. (4.69 max.) 0.320 ref 0.126 mi n . (3.20 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout 0 (0)
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